Article · 2021
Single-trap phenomena stochastic switching for noise suppression in nanowire FET biosensors
Japanese Journal of Applied Physics, 60, SBBG03 · 2021
Abstract
Abstract With the fast-shrinking of the transistor dimensions, the low-frequency noise level considerably increases emerging as an important parameter for the design of advanced devices for information technologies. Single-trap phenomena (STP) is a promising approach for the low-frequency noise suppression technique in nanotransistor biosensors by considering trapping/detrapping noise as a signal. We show a noise reduction mechanism offered by STP in nanoscale devices making the analogy with stochastic resonance effect found in biological systems by considering a single trap as a bistable stochastically driven nonlinear system which transmits and amplifies the weak signals. The STP noise suppression effect is experimentally demonstrated for the fabricated liquid-gated nanosensors exploiting STP. We found the optimal conditions and parameters including optimized gate voltages to implement a stochastic switching effect for the extraction of useful signals from the background noise level. These results should be considered for the development of reliable and highly sensitive nanoscale biosensors.
Cite this work
@article{work-e2885e18b629,
title = {Single-trap phenomena stochastic switching for noise suppression in nanowire FET biosensors},
author = {Kutovyi, Yurii and Madrid, Ignacio and Boichuk, Nazarii and Kim, Soo Hyeon and Fujii, Teruo and Jalabert, Laurent and Offenhaeusser, Andreas and Vitusevich, Svetlana and Clément, Nicolas},
year = {2021},
journal = {Japanese Journal of Applied Physics},
doi = {10.35848/1347-4065/abdc87},
volume = {60},
pages = {SBBG03}
}